Mahdi Pourfath. ORCID iD. Print view. Open a version of this ORCID record formatted for printing. List of computer science publications by Mahdi Pourfath. Ph.D, Vienna University of Technology, Electrical Engineering – Microelectronics . → , Sharif University of Technology, Electrical Engineering -.
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Erasmus Langer Siegfried Selberherr. Mahdi Pourfath was born in Tehran, Iran, in Visit our Beautiful Books page and find lovely books for kids, photography lovers and more. Because the formalism enables rigorous modeling of different scattering mechanisms in terms of self-energies, but an exact evaluation of self-energies for realistic systems is not possible, their approximation and inclusion in the quantum kinetic equations of the Green functions are elaborated.
All pourfatg elements of the kinetic equations, which are the device Hamiltonian, contact self-energies and scattering self-energies, are examined and efficient methods for their evaluation are explained. The device response was studied for a wide range of photon energies. The results indicate that a tensile strain increases mobility, whereas a compressive strain reduces mobility.
Due to ppurfath complexity of the formalism, one should have a deep understanding of the underlying principles and use smart approximations and numerical methods for solving the kinetic equations at a reasonable computational time.
To achieve more realistic results it is necessary to extend the codes to include 3D geometries. Exceptional electronic and mechanical properties together with nanoscale diameters make carbon nanotubes CNTs candidates for nanoscale field effect transistors FETs.
The energy conversion efficiency as a function of the incident photon energy and mahvi width is evaluated and compared to their nanotube counterparts. In order to study the static operation of these devices more deeply, we plan to include scattering into our simulations, which can be achieved by using Buetikker probes. In the next step we employed the non-equilibrium Green’s function formalism to perform a comprehensive study of photo detectors based on GNRs.
Unstrained mobility and mobility enhancement with a strain strongly depend on the energy distance between the K- and Q-valleys.
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In the presence of electric field or optical excitations, which are present in electronic devices, carriers can be driven far from equilibrium. His scientific interests include quantum transport, simulation of carbon nanotubes and nanoelectronic devices.
He joined the Insitute for Microelectronics in Octoberwhere he is currently working on his doctoral degree. Dispatched from the UK in 4 business days When will my order arrive? Mahdi Pourfath pourfzth born in Tehran, Iran, in Finally, the application of these methods to study novel electronic devices such as nanotubes, graphene, Si-nanowires and low-dimensional thermoelectric devices and photodetectors are discussed.
All simulations were based on the assumption of cylindrical symmetry. Other books in this series.
Publications Authored by Mahdi Pourfath | PubFacts
In these structures tunneling between source and drain is controlled by the gate-source voltage. Based on this observed property, we have proposed monolayers of MoSe 2 and WSe 2 as excellent base materials for highly sensitive strain gauges. The contact between metal and CNT can be of ohmic or Schottky type. He studied electrical engineering at the Sharif University of Technology, where he received the MSc degree in As shown in Fig.
Back cover copy For modeling the transport of carriers in nanoscale devices, a Green-function formalism is the most accurate approach. Other 2D materials with a nonzero bandgap, such as single and few-layer transition metal dichalcogenides TMDsoffer promising electrical and optical properties for future electronic applications.
Optical transition matrix elements of graphene across the whole of the Brillouin zone.
Mahdi Pourfath was born in Tehran, Iran, in The absence of an energy gap, however, seriously jeopardizes the usage of this material for some important electronic applications, including digital circuits. An atomistic simulation based on the non-equilibrium Green’s function formalism is employed.
His scientific interests include purfath numerical study of novel nanoelectronic devices. Therefore the device characteristics can be well optimized by careful geometric design. His scientific interests include the numerical study of novel nano-electronic poourfath. Overall mobility solidmobility in K-valleys dashedand mobility in Q-valleys dotted. Table of contents Review of quantum mechanics. There is a good agreement between simulation and experimental results, indicating the validity of the model.
The optical transition matrix elements and the resulting selection rules were also derived. Structures that realize this behavior are carbon nanotubes and Graphene NanoRibbons GNRs that impose periodic and zero boundary conditions, respectively, on the transverse electron wave-vector.
Graphene, as the most prominent 2D material, is attractive for use in next-generation nanoelectronic devices because of mqhdi high carrier mobility. Solid and dashed curves, respectively, denote the results for biaxial and uniaxial strain along the armchair direction. The direct mahei and the tuneability of the band-gap with the GNRs width pourvath these structures as suitable candidates for opto-electronic devices, especially for infrared applications, due to the relatively narrow band gap.
Description For modeling the transport of carriers in nanoscale devices, a Green-function formalism is the most accurate approach. The Pourfat function is studied in detail for systems both under equilibrium and under nonequilibrium conditions.
The electronic band-structure of GNRs depends on the nature of their edges, which can be zigzag or armchair.
One of the many interesting properties of Dirac electrons in graphene are the drastic changes of the conductivity of graphene-based structures with the confinement of electrons. This material exhibits an extraordinarily high carrier mobility and is considered a pourfth candidate as a future high speed transistor material. He joined the Institute for Microelectronics in Octoberwhere he received his doctoral degree in technical sciences in July and is currently employed as a post-doctoral researcher.
Furthermore, it can be inferred from the results that due to the smaller density of states and the resulting smaller quantum capacitance of GNRs as compared to graphene, better switching and frequency response can be achieved for VTGNRFETs.
By changing the gate voltage the transmission coefficient of holes through the device is modulated and, as a result, the total current changes.